power mosfet 20 v, 3.2 a, single n?channel, sot?23 features ? leading planar technology for low gate charge / fast switching ? 2.5 v rated for low voltage gate drive ? sot?23 surface mount for small footprint ? pb?free package is available applications ? load/power switch for portables ? load/power switch for computing ? dc?dc conversion maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source voltage v dss 20 v gate?to?source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 3.2 a current (note 1) state t a = 85 c 2.4 a steady state power dissipation (note 1) steady state p d 1.25 w pulsed drain current t p = 10 s i dm 10.0 a operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i s 1.6 a lead temperature for soldering purposes (1/8o from case for 10 s) t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal resistance ratings parameter symbol max unit junction?to?ambient (note 1) r ja 100 c/w junction?to?ambient (note 2) r ja 300 1. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface?mounted on fr4 board using the minimum recommended pad size. g d s device package shipping 2 ordering information 20 v 85 m @ 2.5 v 70 m @ 4.5 v r ds(on) typ 3.6 a i d max (note 1) v (br)dss n?channel 3.1 a 3000 / tape & reel n45 s-ln4501lt1g sot? 23 (to?236ab) leshan radio company, ltd. rev .o 1/4 1 2 3 ln4501lt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. ln4501lt1g n45 s-ln4501lt1g ln4501lt3g 10000 / tape & reel s-ln4501lt3g
electrical characteristics (t j = 25 5 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain-to-source breakdown voltage (note 3) v (br)dss v gs = 0 v, i d = 250 a 20 24.5 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j 22 mv/ 5 c zero gate voltage drain current i dss v gs = 0 v t j = 25 5 c 1.5 a v ds = 16 v t j = 85 5 c 10 a gate-to-source leakage current i gss v ds = 0 v, v gs = + 12 v + 100 na on characteristics gate threshold voltage (note 3) v gs(th) v gs = v ds , i d = 250 a 0.6 0 1.2 v negative threshold temperature coefficient v gs(th) /t j -2.3 mv/ 5 c drain-to-source on resistance r v gs = 4.5 v, i d = 3.6 a 70 80 m r ds(on) v gs = 2.5 v, i d = 3.1 a 85 105 m forward transconductance g fs v ds = 5.0 v, i d = 3.6 a 9 s charges and capacitances input capacitance c iss 200 output capacitance c oss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 80 pf reverse transfer capacitance c rss v ds = 10 v 50 total gate charge q g(tot) 2.4 6.0 gate-to-source gate charge q gs v gs = 4.5 v, v ds = 10 v, i d = 3.6 a 0.5 nc gate-to-drain charge q gd i d = 3 . 6 a 0.6 switching characteristics (note 4) turn-on delay time t d(on) 6.5 rise time t r v gs = 4.5 v, v ds = 10 v, 12 ns turn-off delay time t d(off) v gs = 4 . 5 v , v ds = 10 v , i d = 3.6 a, r g = 6.0 12 ns fall time t f 3 source-drain diode characteristics forward diode voltage v sd v gs = 0 v, i sd = 1.6 a 0.8 1.2 v reverse recovery time t rr 7.1 charge time t a v gs = 0 v, d is /d t =100a/ s 5 ns discharge time t b d is / d t = 100 a / s, i s = 1.6 a 1.9 reverse recovery charge q rr s 3.0 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. leshan radio company, ltd. ln4501lt1g , s-ln4501lt1g rev .o 2/4
leshan radio company, ltd. typical electrical characteristics rev .o 3/4 ln4501lt1g , s-ln4501lt1g
sot?23 soldering footprint* ? mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 21: pin 1. gate 2. source 3. drain d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318?01 thru ?07 and ?09 obsolete, new standard 318?08. leshan radio company, ltd. rev .o 4/4 ln4501lt1g , s-ln4501lt1g
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